Aluminum Oxide-Silver Nanoparticle Interfaces for Memristive Applications

In the present work, a facile approach to construct a nonvolatile resistive random access memory device based on the heterojunction of silver nanoparticles and aluminum oxide is reported. The device structure consisting of Aluminum-Aluminum oxide-Silver Nanoparticles-Aluminum is used to study the charge transport. The current-voltage measurements of this device clearly show the transition from one state to other in two different steps. Initially, a major transition with the resistance ratio as high as 10 is obtained for the device whereas the minor transition has resulted one order difference in between its low conducting state and high conducting state. The prepared memristor is found to operate at low operational voltages with better uniformity.